HiPerFET TM
Power MOSFETs
Q-Class
IXFH 15N80Q
IXFT 15N80Q
V DSS
I D25
R DS(on)
=
=
=
800 V
15 A
0.60 W
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q g
t rr £ 250 ns
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXFH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
800
800
V
V
V GS
V GSM
I D25
I DM
I AR
E AR
E AS
dv/dt
Continuous
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S £ I DM , di/dt £ 100 A/ m s, V DD £ V DSS ,
± 20
± 30
15
60
15
30
1.0
5
V
V
A
A
A
mJ
J
V/ns
(TAB)
TO-268 (D3) (IXFT) Case Style
T J £ 150 ° C, R G = 2 W
G
P D
T J
T JM
T stg
T L
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
300
-55 ... +150
150
-55 ... +150
300
W
° C
° C
° C
° C
G = Gate
S = Source
S
D = Drain
TAB = Drain
(TAB)
M d
Weight
Mounting torque
TO-247
1.13/10 Nm/lb.in.
6 g
Features
TO-268
4
g
?
IXYS advanced low Q g process
?
International standard packages
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
?
?
Low R DS (on)
Unclamped Inductive Switching (UIS)
rated
V DSS
V GS = 0 V, I D = 3 mA
800
V
? Fast switching
V GS(th)
I GSS
I DSS
R DS(on)
V DS = V GS , I D = 4 mA
V GS = ± 20 V DC , V DS = 0
V DS = V DSS T J = 25 ° C
V GS = 0 V T J = 125 ° C
V GS = 10 V, I D = 0.5 I D25
Pulse test, t £ 300 m s, duty cycle d £ 2 %
2.0
4.5
± 100
25
1
0.60
V
nA
m A
mA
W
? Molding epoxies meet UL 94 V-0
flammability classification
Advantages
? Easy to mount
? Space savings
? High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
98514B (7/00)
1-4
相关PDF资料
IXFT16N80P MOSFET N-CH 800V 16A TO-268
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IXFT18N100Q3 MOSFET N-CH 1000V 18A TO-268
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